dual igbt hvigbt module 100 amperes/3300 volts 1 QID3310006 preliminary outline drawing and circuit diagram dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.50 38.0 d 4.880.01 124.00.25 e 2.240.01 57.00.25 f 1.18 30.0 g 0.43 11.0 h 1.07 27.15 j 0.20 5.0 k 1.65 42.0 description: powerex hvigbts feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear - ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. features: ? -40 t o 150c extended t emperature range ? 1 00% dynamic tested ? 1 00% partial discharge tested ? a dvanced mitsubishi r-series chip t echnology ? alumin um nitride (aln) ceramic substr ate for low thermal impedance ? c omplementary line-up in expanding curr ent ranges to mitsubishi hvigbt p ower modules ? c opper baseplate ? cr eepage and clearance meet iec 60077 -1 ? r ugged swsoa and rrsoa applications: ? high voltage power supplies ? medium v oltage drives ? mot or drives ? traction dimensions inches millimeters l 0.690.01 17.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1.04 26.5 r 0.16 4.0 s m5 metric m5 t 0.63 min. 16.0 min. u 0.11 x 0.02 2.8 x 0.5 v 0.28 dia. 7.0 dia. 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) eb k (3typ) l (2typ) p u (5typ) t (screwing depth - 3 typ) q 5 4 f f d a c 1 2 3 4 5 6 7 8 11/14 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID3310006 units junction temperature t j -50 t o +150 c operating temperature t op -50 t o +150 c storage temperature t stg -55 t o +150 c collector-emitter voltage (v ge = 0v) v ces 3300 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (t c = 102c) i c 1 00 amperes collector current (t c = 25c) i c 1 85 amper es peak collector current (pulse) i cm 200* amperes diode forward current** (t c = 99c) i f 1 00 amperes diode forward surge current** (pulse) i fm 200* amperes i 2 t for diode (t = 10ms, v r = 0v, t j = 125c) i 2 t 7 .5 ka 2 sec maximum collector dissipation (t c = 25c, igbt part, t j(max) 150c) p c 1 040 w atts mounting torque, m5 terminal screws 35 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 800 gr ams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 6.0 kv olts partial discharge q pd 10 pc (v1 = 3500 v rms , v2 = 2600 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 2500v, v ce v ces , v ge = 15v, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 5.5 6.0 6.5 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c 2.7*** 3.0 volts i c = 100a, v ge = 15v, t j = 125c 3.4 4.0 volts i c = 100a, v ge = 15v, t j = 150c 3.6 volts total gate charge q g v cc = 1800v, i c = 85a, v ge = 15v 0.9 c emitter-collector voltage** v ec i e = 100a, v ge = 0v, t j = 25c 2.3 3.0 volts i e = 100a, v ge = 0v, t j = 125c 2.45 volts i e = 100a, v ge = 0v, t j = 150c 2.55 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *** pulse width and repetition rate should be such that device junction temperature rise is negligible. QID3310006 dual igbt hvigbt module 100 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 preliminary information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 1 1.5 nf output capacitance c oes v ge = 0v, v ce = 10v 0.75 nf reverse transfer capacitance c res 0.35 nf turn-on delay time t d(on) v cc = 1800v, i c = 100a, 800 ns rise time t r v ge = 15v, 1 60 ns turn-off delay time t d(off) r g(on) = 30?, r g(off) = 100?, 3200 ns fall time t f l s = 100nh, inductive load 1 300 ns turn-on switching energy e on t j = 150c, i c = 100a, v ge = 15v, 250 mj/p turn-off switching energy e off r g(on) = 30?, r g(off) = 100?, 1 80 mj/p v cc = 1800v, l s = 100nh, inductive load diode reverse recovery time** t rr v cc = 1800v, i e = 100a, 500 ns diode reverse recovery charge** q rr v ge = 15v, r g(on) = 30?, 90* c diode reverse recovery energy e rec l s = 100nh, inductive load, t j = 150c 1 33 mj/p stray inductance (c1-e2) l sce 75 nh lead resistance terminal-chip r ce 1.5 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case*** r th(j-c) q per igbt 0.12 c/w thermal resistance, junction to case*** r th(j-c) d per fwdi 0.19 c/w contact thermal resistance, case to fin r th(c-f) per module, 0.0 18 c/w thermal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air (terminal to base) d a(t-b) 35.0 mm creepage distance along surface d s(t-b) 64 mm (terminal to base) clearance distance in air d a(t-t) 19 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measurement point is just under the chips. QID3310006 dual igbt hvigbt module 100 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 preliminary information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v ce = v ge t j = 25c t j = 150c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 21 3 4 5 6 0 v ge = 19v 11 15 13 9 t j = 150 c 25 50 75 100 125 150 0 25 50 75 100 125 150 0 25 50 75 100 125 150 0 25 50 75 100 125 150 0 42 6 8 10 12 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) 0 5 2 43 v ge = 15v t j = 25c t j = 150c 1 0 5 2 43 1 t j = 25c t j = 150c QID3310006 dual igbt hvigbt module 100 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 preliminary information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 50.0 5.0 0.5 0.05 10 1 v ge = 0v t j = 25c f = 100 khz c ies c oes c res 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 5 10 15 0 -5 -10 -15 0.25 1.0 0.75 0.5 v ce = 1800v i c = 85a t j = 25c collector current, i c , (amperes) switching energies, e on , e off , e rec , (mj/pulse) 550 500 400 450 50 100 150 200 250 300 350 0 v cc = 1800v v ge = 15v r g(on) = 30 r g(off) = 100 l s = 100nh t j = 150c inductive load half-bridge switching energy characteristics (typical) e on e off e rec 0 5025 75 100 125 150 175 0 5025 75 100 125 150 175 collector current, i c , (amperes) switching energies, e on , e off , e rec , (mj/pulse) 500 400 450 50 100 150 200 250 300 350 0 v cc = 1800v v ge = 15v r g(on) = 30 r g(off) = 100 l s = 100nh t j = 125c inductive load switching energy characteristics (typical) e rec e on e off QID3310006 dual igbt hvigbt module 100 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 preliminary information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 collector emitter voltage, v ces , (volts) 250 200 150 100 50 0 2000 1000 3000 0 250 200 150 100 50 0 collector current, i c , (amperes) reverse bias safe operating area (typical) v cc 2500v v ge = 15v r g(off) = 100 t j = 150c 4000 emitter-collector voltage, v ec , (volts) 0 2000 1000 3000 reverse recovery current, i rr , (amperes) free-wheel diode reverse recovery safe operating area (typical) v cc 2500v di/dt = 1ka/s t j = 150c 4000 time, (s) transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.6 0.4 0.2 0 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.12c/w (igbt) r th(j-c) = 0.19c/w (fwdi) normalized transient thermal impedance, z th(j-c') QID3310006 dual igbt hvigbt module 100 amperes/3300 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 1 preliminary information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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